Title :
A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application
Author :
Chun Yang ; Xiaole Cui ; Bo Wang ; Chung Len Lee
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.
Keywords :
CMOS integrated circuits; reference circuits; resistors; CMOS curvature compensated bandgap reference circuit; line regulation; low temperature coefficient curvature compensated bandgap; low voltage application; power supply rejection ratio; resistors; size 0.18 mum; temperature coefficient; voltage 1.1 V; Solids; Curvature compensated; P-diffusion resistor; bandgap; low power;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628095
