Title :
Leakage current variation with time in Ta2O5 MIM and MIS capacitors
Author :
Manceau, J.-P. ; Bruyere, S. ; Jeannot, S. ; Sylvestre, A. ; Gonon, P.
Author_Institution :
STMicroelectronics, Crolles
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
In this paper Ta2O5 current instability in MIM and MIS capacitors is studied over several sample thicknesses with a current versus time measurement and a low frequency dielectric spectroscopy. Three types of phenomena is identified: polarization current (attributed to dielectric relaxation phenomena), conduction current (attributed to a Poole-Frenkel mechanism) and resistance degradation. This last one has been attributed to ionic diffusion in dielectric and follows the space-charge-limited (SCL) theory. According to physical characterization the origin of resistance degradation has been attributed to oxygen vacancies migration
Keywords :
MIM devices; MIS capacitors; Poole-Frenkel effect; dielectric polarisation; dielectric relaxation; leakage currents; space-charge-limited conduction; tantalum compounds; MIM capacitors; MIS capacitors; Poole-Frenkel mechanism; Ta2O5; conduction current; current instability; current versus time measurement; dielectric relaxation phenomena; ionic diffusion; leakage current variation; low frequency dielectric spectroscopy; oxygen vacancies migration; polarization current; resistance degradation; space-charge-limited theory; Current measurement; Dielectric measurements; Frequency; Leakage current; MIM capacitors; Polarization; Temperature; Time measurement; Tin; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305226
