Title :
Preliminary Study of the Breakdown Strength of TiN/HfO2/SiO2/Si MOS Gate Stacks
Author :
Southwick, Richard G., III ; Elgin, Mark C. ; Bersuker, Gennadi ; Choi, Rino ; Knowlton, William B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boise State Univ., ID
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength is performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon; silicon compounds; titanium compounds; MOS gate stacks; TiN-HfO2-SiO2-Si; breakdown strength; electron gate injection; gate stack reliability; time-zero dielectric breakdown; Breakdown voltage; Dielectric breakdown; Electric breakdown; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Performance evaluation; Testing; Tin;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305231
