• DocumentCode
    3475822
  • Title

    Preliminary Study of the Breakdown Strength of TiN/HfO2/SiO2/Si MOS Gate Stacks

  • Author

    Southwick, Richard G., III ; Elgin, Mark C. ; Bersuker, Gennadi ; Choi, Rino ; Knowlton, William B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boise State Univ., ID
  • fYear
    2006
  • fDate
    Oct. 16 2006-Sept. 19 2006
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength is performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon; silicon compounds; titanium compounds; MOS gate stacks; TiN-HfO2-SiO2-Si; breakdown strength; electron gate injection; gate stack reliability; time-zero dielectric breakdown; Breakdown voltage; Dielectric breakdown; Electric breakdown; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Performance evaluation; Testing; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305231
  • Filename
    4098708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475822