Title :
A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process
Author :
Yuan Wang ; Guangyi Lu ; Jian Cao ; Qi Liu ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits (MoE), Peking Univ., Beijing, China
Abstract :
A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.
Keywords :
BiCMOS integrated circuits; MOSFET; electrostatic discharge; silicon-on-insulator; ESD self-protecting symmetric nLDMOS; SOl BCD process; Si; electrostatic discharge self-protection; output characteristics; size 0.18 mum; symmetric n-type lateral diffusion MOS; voltage 60 V; Earth Observing System; Performance evaluation; Standards; Electrostatic discharge (ESD); Transmission line pulse (TLP); silicon controlled rectifier (SCR); symmetric n-type lateral diffusion MOS (sym-nLDMOS);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628102
