Title :
Modeling for contact resistance between metallic carbon nanotubes and semiconducting substrates of field emission devices
Author :
Liu Lining ; Li Bin
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
A Schottky Barrier would inevitably exist in Metal-Semiconductor contact, which will cause a contact resistance that effect emission current of field emission devices. A model of contact resistance between metallic carbon nanotubes (CNT) and doped semiconducting substrates is proposed in this paper to evaluate this effect. Besides, factors that impact this contact are discussed, which could be valuable for the design of CNT field emission devices.
Keywords :
carbon nanotubes; contact resistance; field emission; CNT field emission devices; Schottky barrier; contact resistance modeling; doped semiconducting substrates; effect emission current; metal-semiconductor contact; metallic carbon nanotubes; Computational modeling; Semiconductor device modeling; Carbon Nanotube (CNT); Contact resistance; Emission Current; Field Emission;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628103
