Title :
Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS
Author :
White, Mark ; Vu, Duc ; Nguyen, Duc ; Ruiz, Ron ; Chen, Yuan ; Bernstein, Joseph B.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fDate :
Oct. 16 2006-Sept. 19 2006
Abstract :
As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s)
Keywords :
CMOS integrated circuits; electric breakdown; electromigration; failure analysis; hot carriers; integrated circuit reliability; integrated circuit technology; life testing; accelerated stress testing; advanced technology CMOS; deep submicron regime; derating considerations; electromigration effect; failure mechanism; failure mechanisms; hot carrier degradation; product reliability; scaled CMOS; scaling effects; time-dependent-dielectric-breakdown effect; wearout mechanisms; CMOS technology; Degradation; Electromigration; Failure analysis; Hot carriers; Human computer interaction; Microelectronics; Niobium compounds; Space technology; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2006 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
1-4244-0296-4
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2006.305234
