Analytical model for an extended field plate effect on trench LDMOS with high-k permittivity

Author

Xiarong Hu ; Bo Zhang ; Xiaorong Luo ; Yongheng Jiang ; Kun Zhou ; Zhaoji Li

Author_Institution

State key Lab. of Electron. Thin Films & Integrated devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

An analytical model for the extended field plate effect on trench LDMOS with high-k permittivity is presented in this paper. The RESURF criterion for the trench LDMOS with extended field plate is derived, both analytical and numerical results show the drift doping is increased with high-k dielectric layer. The analysis of the breakdown mechanism is researched, and an optimal design is achieved that the voltage supported by dielectric layer is equal to the voltage supported by the drift region. The relative dielectric coefficient of high-k materials are in the range of 4~12 when the thickness of the dielectric layer is below 600nm. The breakdown voltage is decreased for a too high permittivity of the high-k material.

Keywords

MIS devices; doping; electric breakdown; high-k dielectric thin films; isolation technology; permittivity; plates (structures); RESURF criterion; breakdown voltage; drift doping; drift region; extended field plate effect; high-k dielectric layer; high-k material permittivity; numerical results; relative dielectric coefficient; trench LDMOS; High K dielectric materials; Field Plate; LDMOS; RESURF; permittivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628106

Filename

6628106