Title :
Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric
Author :
Han, C.Y. ; Leung, C.H. ; Lai, P.T. ; Tang, W.M. ; Che, C.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V·s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.
Keywords :
ammonia; annealing; carrier mobility; fluorine; hafnium compounds; high-k dielectric thin films; plasma applications; thin film transistors; titanium compounds; F; HfTiO; NH3; OTFT performance; ammonia annealing; carrier mobility; fluorine plasma treatment; high-k gate dielectric; on-off ratio; pentacene organic thin-film transistor; positive direction; subthreshold slope; threshold voltage; Annealing; Dielectrics; Insulators; Logic gates; Organic thin film transistors; Sensors; HfTiO; OTFT; dielectric; high k;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628118
