Title :
Feature size dependence of total dose effects in the irradiated NMOS devices
Author :
Yujuan He ; Yuan Liu ; Xiaolan Zhou
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
Abstract :
Total ionizing dose irradiation effect in NMOS Devices with 0.18μm, 0.35μm and 1μm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.
Keywords :
MIS devices; leakage currents; radiation hardening (electronics); NMOS devices; feature size dependence; gate oxide thickness; radiation threshold voltage; size 0.18 mum; size 0.35 mum; size 1 mum; total ionizing dose irradiation effect; trench sidewall leakage; Logic gates; MOS devices; Total inoining dose; feature size; trench sidewall leakage;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628121
