DocumentCode
3476290
Title
Feature size dependence of total dose effects in the irradiated NMOS devices
Author
Yujuan He ; Yuan Liu ; Xiaolan Zhou
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
Total ionizing dose irradiation effect in NMOS Devices with 0.18μm, 0.35μm and 1μm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.
Keywords
MIS devices; leakage currents; radiation hardening (electronics); NMOS devices; feature size dependence; gate oxide thickness; radiation threshold voltage; size 0.18 mum; size 0.35 mum; size 1 mum; total ionizing dose irradiation effect; trench sidewall leakage; Logic gates; MOS devices; Total inoining dose; feature size; trench sidewall leakage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628121
Filename
6628121
Link To Document