Title :
SCR device for on-chip ESD protection in RF power amplifier
Author :
Chun-Yu Lin ; Ming-Dou Ker
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.
Keywords :
CMOS analogue integrated circuits; electrostatic discharge; power amplifiers; radiofrequency amplifiers; thyristors; CMOS process; I-V characteristics; RF performances; RF power amplifier; SCR device; electrostatic discharge; good-latchup-immune ESD protection device; on-chip ESD protection; radiofrequency power amplifier; size 65 nm; Abstracts; Anodes; CMOS integrated circuits; CMOS technology; Capacitance; Cathodes; Thyristors; Electrostatic discharge (ESD); power amplifier (PA); radio-frequency (RF); silicon-controlled rectifier (SCR);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628124
