DocumentCode :
3476419
Title :
Impact of dielectric isolation technology on power ICs
Author :
Nakagawa, Akio
Author_Institution :
Toshiba Res. Dev. & Center, Kawasaki, Japan
fYear :
1991
fDate :
22-24 Apr 1991
Firstpage :
16
Lastpage :
21
Abstract :
The impact and advantages of dielectric isolation (DI) are discussed, and the directions of DI research are highlighted. It is noted that DI is a superior method for integrating many kinds of devices in a single chip. The success of a high voltage telecommunication IC, called SLIC, has advanced the technology of DI. It is suggested that the next driving force will be high voltage and relatively large current power ICs, integrating a small power system unit into a single chip. This small-scale version of system-on-chip ICs will fully utilize the advantages of the DI method, operated at a high temperature when installed inside such instruments as motors or lamps. This will realize simplified and small sized power systems or equipment. Research efforts for a low cost DI method will be led by SOI (silicon on insulator) technology using several-micron-thick-or-less silicon layers. This will simplify the device isolation and even attain high voltages
Keywords :
integrated circuit technology; monolithic integrated circuits; power integrated circuits; SOI; Si; dielectric isolation technology; high temperature; power ICs; Costs; Dielectrics; Instruments; Isolation technology; Power integrated circuits; Power systems; Silicon on insulator technology; System-on-a-chip; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
ISSN :
1063-6854
Print_ISBN :
0-7803-0009-2
Type :
conf
DOI :
10.1109/ISPSD.1991.146056
Filename :
146056
Link To Document :
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