DocumentCode :
3476449
Title :
Failure of chip sized packaging (CSP) under coupling fields of electrical current and thermal cycle
Author :
Gao, Feng ; Zhu, Q.S. ; Zheng, Kai ; Liu, Z.Q. ; Guo, J.D. ; Zhang, Leiqi ; Shang, J.K.
Author_Institution :
Shenyang Nat. Lab. for Mater. Sci., Inst. of Metal Res., Shenyang, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
30
Lastpage :
33
Abstract :
In this work, we investigated the failure behavior of a commercial chip size packaging (CSP) under coupling fields of electrical current and thermal cycles. The failure process was real-time monitored through the response resistance change. Under the coupling condition, the lifetime was much shorter than that in single thermal cycle condition. Instead of the void accumulation mechanism, the excessive Joule heat was considered to be failure mechanism in coupling condition. The high temperature induced rapid dissolution of Cu UBM and overheat led to the melt of the solder.
Keywords :
chip scale packaging; failure analysis; metallisation; solders; CSP; Cu; Joule heat; UBM; chip sized packaging; coupling fields; electrical current; failure mechanism; response resistance change; solder joint; thermal cycle; under bump metallization; void accumulation mechanism; Couplings; Electromigration; Loading; Soldering; Temperature measurement; Thermal resistance; Chip Size Packaging; Electromigration; Mechanical-electrical Coupling; Solder joint; Thermal cycle;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756414
Filename :
6756414
Link To Document :
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