A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Author

Hao Zhang ; Mengshu Huang ; Yimeng Zhang ; Xutao Li ; Yoshihara, Tatsuhiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka, Japan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm².

Keywords

CMOS integrated circuits; MOSFET; large scale integration; power supplies to apparatus; switched capacitor networks; voltage measurement; MOSFET; area occupation; body effect; chip area; current supply; line sensitivity; nanopower CMOS voltage reference; nanopower switched-capacitor voltage reference; output breaking threshold restriction; size 0.18 mum; subthreshold LSI; switched-capacitor technology; temperature coefficient; voltage 1 V; voltage 123.3 mV; voltage supply; CMOS integrated circuits; CMOS technology; Capacitors; MOSFET; Switching circuits; Temperature measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628130

Filename

6628130