Title :
A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI
Author :
Hao Zhang ; Mengshu Huang ; Yimeng Zhang ; Xutao Li ; Yoshihara, Tatsuhiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka, Japan
Abstract :
Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.
Keywords :
CMOS integrated circuits; MOSFET; large scale integration; power supplies to apparatus; switched capacitor networks; voltage measurement; MOSFET; area occupation; body effect; chip area; current supply; line sensitivity; nanopower CMOS voltage reference; nanopower switched-capacitor voltage reference; output breaking threshold restriction; size 0.18 mum; subthreshold LSI; switched-capacitor technology; temperature coefficient; voltage 1 V; voltage 123.3 mV; voltage supply; CMOS integrated circuits; CMOS technology; Capacitors; MOSFET; Switching circuits; Temperature measurement; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628130
