Title :
The recovery effect of hot-carrier degradation under dynamic stress condition for SOI-nLDMOS device
Author :
Chunwei Zhang ; Siyang Liu ; Weifeng Sun ; Wei Su ; Yuwei Liu ; Guoan Chen ; Xiaowei He
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
The recovery effect of the hot-carrier degradation under the dynamic stress for the silicon-on-insulator n-type lateral DMOS (SOI-nLDMOS) was investigated in the paper. Based on the degradation of SOI-nLDMOS under the different duty cycle dynamic stress conditions, we found the serious recovery phenomenon. By further study, it was concluded that the de-trapping of hot-hole injecting into the bird´s beak region occurred when the stress changed from low Vgs and high Vds condition to high Vgs and low Vds condition. Moreover, the charge pumping (CP) and the simulation results also verified the conclusion.
Keywords :
MIS devices; hot carriers; recovery; semiconductor device reliability; silicon-on-insulator; stress effects; SOI-nLDMOS device; Si; bird beak region; charge pumping; de-trapping; dynamic stress condition; hot-carrier degradation; hot-hole injection; recovery effect; silicon-on-insulator n-type lateral DMOS; Degradation; Stress;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628131
