Title :
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices
Abstract :
The following topics were dealt with: novel materials; microscopic simulation of semiconductor lasers in GaInNAs material system; GaInNAs/GaAs quantum wells; GaN-based devices; nanostructures; photodetectors and solar cells; laser diodes; optoelectronic integrated circuits; semiconductor optical amplifiers; photonic crystal devices; microoptical elements; fibre optics and networks; light emitting diodes; and photonic circuits
Keywords :
gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; micro-optics; nanostructured materials; optical fibre networks; optical fibres; optical materials; photodetectors; photonic crystals; semiconductor optical amplifiers; semiconductor quantum wells; solar cells; GaInNAs material system; GaInNAs-GaAs; GaInNAs-GaAs quantum well; GaN-based device; fibre networks; fibre optics; laser diodes; light emitting diodes; microoptical elements; microscopic simulation; nanostructure; optoelectronic integrated circuits; photodetectors; photonic circuits; photonic crystal devices; semiconductor laser; semiconductor optical amplifiers; solar cells;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306703
