Title :
A low-power CMOS low-noise amplifier for ultra-wideband applications
Author :
Chun-Tuan Chang ; Sen Wang
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
This paper presents a low-power CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) applications using a cascoded common-gate (CG) topology. The CG-LNA is fabricated by a standard 0.18-μm CMOS process with a chip size of 0.77 mm2. The CMOS UWB LNA dissipates 10.7 mW and achieves |S11| below -10.2 dB, |S22| below -9.7 dB, and |S12| below -37.3 dB. Moreover, the power gain |S21| achieves a maximum of 14.5 dB at 10.42 GHz, and the noise figure is 3.6±0.2 dB at the frequency of interest. The input P1dB and IIP3 is -26.8 dBm and -15.7 dBm, respectively.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; ultra wideband communication; CG-LNA; UWB applications; cascoded common-gate topology; frequency 10.42 GHz; low-power CMOS low-noise amplifier; power 10.7 mW; size 0.18 mum; ultrawideband applications; CMOS integrated circuits; CMOS technology; Gain; Gain measurement; Indexes; Radio access networks; CMOS; common-gate(CG); low powe; low-noise amplifier(LNA); ultra-wideband(UWB);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628133
