Title :
A 16-bit 1MS/s 44mW successive approximation register analog-to-digital converter achieving signal-to-noise-and-distortion-ratio of 94.3dB
Author :
Yingying Chi ; Dongmei Li ; Zhihua Wang
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
A relatively low-power 16-bit 1MS/s successive approximation register (SAR) analog-to-digital converter (ADC) is presented in this paper. Based on the typical structure of SAR ADC, some effective techniques including bootstrapped sampling-switch used to suppress nonlinear distortion, dynamic comparator to reduce power dissipation and the offset-calibration to ensure conversion accuracy have been employed. The off-chip search algorithm is developed against the harmonic distortion resulted from capacitor mismatch. Simulation with parasitism extracted from the layout demonstrates that the ADC achieves signal-to-noise-and-distortion-ratio (SNDR) of 94.3dB at 1MSamples/s, 500KHz input frequency and consumes 44mW from a 1.8V power supply. With the 0.18μm complementary metal-oxide semiconductor (CMOS) process and metal-insulator-metal (MIM) capacitor, the ADC core including decoupling capacitors occupies an active area of 1.0mm×1.4mm.
Keywords :
CMOS integrated circuits; MIM devices; analogue-digital conversion; calibration; capacitors; comparators (circuits); harmonic distortion; nonlinear distortion; CMOS process; MIM capacitor; SAR-ADC; SNDR; bootstrapped sampling-switch; capacitor mismatch; complementary metal-oxide semiconductor process; decoupling capacitors; dynamic comparator; frequency 500 kHz; harmonic distortion; metal-insulator-metal capacitor; nonlinear distortion suppression; off-chip search algorithm; offset-calibration; power 44 mW; power dissipation reduction; signal-to-noise-and-distortion-ratio; size 0.18 mum; successive approximation register analog-to-digital converter; voltage 1.8 V; Approximation methods; CMOS integrated circuits; Calibration; Capacitors; Clocks; Layout; Noise;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628134