Title :
IDDQ testing in deep submicron integrated circuits
Author :
Miller, Anthony C.
Author_Institution :
Intel Corp., Chandler, AZ, USA
Abstract :
The increased background leakage current of deep submicron devices threatens the practical application of the traditional IDDQ test. This paper describes a new Delta IDDQ test technique which has proven effective at defect detection for deep submicron memory and logic devices
Keywords :
CMOS digital integrated circuits; CMOS memory circuits; SRAM chips; electric current measurement; fault diagnosis; integrated circuit testing; leakage currents; logic testing; microprocessor chips; CMOS process technology; Delta IDDQ test technique; IDDQ testing; SRAM testing; background leakage current; deep submicron integrated circuits; deep submicron logic devices; deep submicron memory devices; defect detection; microprocessor testing; signature analysis; CMOS process; CMOS technology; Circuit testing; Graphics; Integrated circuit testing; Leakage current; Logic testing; Materials testing; Measurement standards; Temperature measurement;
Conference_Titel :
Test Conference, 1999. Proceedings. International
Conference_Location :
Atlantic City, NJ
Print_ISBN :
0-7803-5753-1
DOI :
10.1109/TEST.1999.805801
