Title :
Microscopic simulation of semiconductor lasers in the GaInNAs material system
Author :
Thränhardt, A. ; Schlichenmaier, C. ; Kuznetsova, I. ; Koch, S.W. ; Chow, W.W. ; Hader, J. ; Moloney, J.V.
Author_Institution :
Dept. of Phys., Philipps-Univ. Marburg
Abstract :
(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 mum structure are investigated and show no principal degradation as compared to a 1.3 mum structure
Keywords :
Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; optical materials; quantum well lasers; wide band gap semiconductors; 1.55 micron; Auger losses; GaInNAs; laser characteristics; microscopic simulation; optical properties; semiconductor lasers; Degradation; Gallium arsenide; Laser theory; Light scattering; Microscopy; Optical attenuators; Optical materials; Optical scattering; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306712
