Title :
Ultra-low RESET current RRAM device by side-RESET operation method
Author :
Haitao Sun ; Hangbing, L.V. ; Qi Liu ; Shibing Long ; Ming Wang ; Hongwei Xie ; Xiaoyu Liu ; Xiaoyi Yang ; Jiebin Niu ; Ming Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Resistive switching memory with low switching current is critical for low power application. In this work, we successfully demonstrated a four-terminal RRAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. Therefore, during RESET process, no current flows through the filaments, leading to an ultra-low switching current.
Keywords :
electrodes; low-power electronics; random-access storage; switching circuits; electrodes; four-terminal RRAM device; low power application; resistive switching memory; side-RESET operation method; ultra-low RESET current RRAM device; ultra-low switching current; Electrodes; Resistance; Substrates; filament; low power; planar structure; resistive switching memory; side-RESET;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628141
