Title :
Optoelectronic Properties of InGaN SQW with Embedded AlGaN δ-Layer
Author :
Park, Jongwoon ; Kaneta, Akio ; Funato, Mitsuru ; Kawakami, Yoichi
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ.
Abstract :
We investigate the carrier transport and optical properties of a thick InGaN single quantum well (SQW) where an AlGaN δ-layer is embedded. It is shown that the results of photoluminescence (PL) measurements are consistent with the numerical predictions
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlGaN-InGaN; PL measurements; SQW; carrier transport; delta-layer; optical properties; optoelectronic properties; photoluminescence; single quantum well; Aluminum gallium nitride; Charge carrier processes; Electron mobility; Epitaxial growth; Gallium nitride; Indium; Neodymium; Poisson equations; Schrodinger equation; Threshold current;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306715
