Title :
Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes
Author :
Yen, Sheng-Horng ; Chen, Bo-Jean ; Kuo, Yen-Kuang
Author_Institution :
Dept. of Phys., Nat. Changhua Univ. of Educ.
Abstract :
Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in spectral range from 370 to 410 nm, are investigated and compared. The feasibility of using multiquantum barriers and doped barriers to improve the laser performance is numerically evaluated. The characteristic temperatures for the laser diodes under study will be investigated. Optimization of the structures for InGaN violet and ultraviolet multiple-quantum-well laser diodes will be attempted
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optimisation; quantum well lasers; semiconductor device models; wide band gap semiconductors; 370 to 410 nm; InGaN; doped barriers; multiquantum barriers; optical properties; optimization; self-consistent simulation program; ultraviolet multiple-quantum-well laser diodes; violet multiple-quantum-well laser diodes; Aluminum gallium nitride; Diode lasers; Electrons; Gallium nitride; Indium; Laser modes; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306716
