Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes

Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in spectral range from 370 to 410 nm, are investigated and compared. The feasibility of using multiquantum barriers and doped barriers to improve the laser performance is numerically evaluated. The characteristic temperatures for the laser diodes under study will be investigated. Optimization of the structures for InGaN violet and ultraviolet multiple-quantum-well laser diodes will be attempted