Title :
Optical Performance of InGaN/AlGaN Double Heterostucture Light Emitting Diodes
Author :
Thahab, S.M. ; Hassan, Hesham Ahmed ; Hassan, Z.
Author_Institution :
Nano-OptoElectron. Res. & Technol. Lab., Univ. Sains Malaysia, Penang
Abstract :
A simulation study of the output power characteristics of In0.13Ga0.87N/Al0.1Ga0.9N double heterostructure light emitting diodes (DH LEDs) at room temperature was performed using ISETCAD software. We have selected In 0.13Ga0.87N as the active layer with thickness of 40nm sandwiched between 30 nm n-type Al0.1Ga0.9N and 60nm p-type Al0.15Ga0.85N cladding layers. The output power with value of 0.2 mW was obtained at forward current of 60 mA and with peak emission wavelength at 426 nm. We investigated the effect of doping concentration on the output power and peak emission wavelength. No change in the output power was observed for light doping. We also investigated the effect of varying the thickness of the active layer on the output power
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; semiconductor doping; semiconductor heterojunctions; wide band gap semiconductors; 0.2 mW; 293 to 298 K; 30 to 60 nm; 426 nm; 60 mA; DH LED; ISETCAD software; InGaN-AlGaN; active layer; doping concentration; forward current; n-type cladding layers; p-type cladding layers; peak emission wavelength; semiconductor double heterostructure light emitting diodes; Aluminum gallium nitride; DH-HEMTs; Doping; Gallium nitride; Light emitting diodes; Modeling; Power generation; Radiative recombination; Stimulated emission; Temperature; AlGaN; InGaN; light emitting diode;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306717
