Title :
Simulation of InGaN/GaN multiple quantum well light-emitting diodes with Quantum Dot electrical and optical effects
Author :
Xia, C.S. ; Lu, W. ; Simon Li, Z.M. ; Li, Z. M Simon
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci.
Abstract :
We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and non-equilibrium quantum transport play an important role in the InGaN/GaN multiple quantum well light-emitting diodes
Keywords :
III-V semiconductors; carrier mobility; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device models; semiconductor heterojunctions; spontaneous emission; wide band gap semiconductors; 2D simulations; APSYS software; EL spectrum; InGaN-GaN; carrier transport; electrical characteristics; multiple quantum well light-emitting diodes; nonequilibrium quantum transport; optical characteristics; quantum dot electrical effects; quantum dot model; quantum dot optical effects; quantum dot spontaneous emission; Gallium nitride; Light emitting diodes; Optical polarization; Physics; Quantum dots; Quantum well devices; Ray tracing; Resistance heating; Spontaneous emission; Thermionic emission;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306718
