Title :
Analysis of the extraction efficiency in GaN-on-sapphire light emitting diodes
Author :
Lee, Jin-Bock ; Yoon, Sang-ho ; Kim, Dong-woohn ; Choi, Chang-hwan
Author_Institution :
Samsung Electro-Mech. Co. Ltd., Gyunggi-Do
Abstract :
It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different patterned sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs
Keywords :
III-V semiconductors; Monte Carlo methods; gallium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; Al2O3; GaN; Monte Carlo simulation; light extraction efficiency; ray tracing method; sapphire substrate; semiconductor-on-sapphire light emitting diodes; Brightness; Gallium nitride; Light emitting diodes; Numerical simulation; Optical receivers; Optical reflection; Pattern analysis; Ray tracing; Refractive index; Substrates; GaN; LED; extraction efficiency;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306719
