Analysis of the extraction efficiency in GaN-on-sapphire light emitting diodes

Author

Lee, Jin-Bock ; Yoon, Sang-ho ; Kim, Dong-woohn ; Choi, Chang-hwan

Author_Institution

Samsung Electro-Mech. Co. Ltd., Gyunggi-Do

fYear

2006

fDate

Sept. 2006

Firstpage

17

Lastpage

18

Abstract

It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different patterned sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs

Keywords

III-V semiconductors; Monte Carlo methods; gallium compounds; light emitting diodes; semiconductor device models; wide band gap semiconductors; Al₂O₃; GaN; Monte Carlo simulation; light extraction efficiency; ray tracing method; sapphire substrate; semiconductor-on-sapphire light emitting diodes; Brightness; Gallium nitride; Light emitting diodes; Numerical simulation; Optical receivers; Optical reflection; Pattern analysis; Ray tracing; Refractive index; Substrates; GaN; LED; extraction efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306719

Filename

4098759