DocumentCode :
3476853
Title :
A CMOS time-to-digital converter for multi-voltage threshold method in positron emission tomography
Author :
Yan Li ; Yu Hang ; Lai Jiang ; Zhen Ji ; Jun Zhu ; Ming Niu ; Peng Xiao
Author_Institution :
Shenzhen City Key Lab. of Embedded Syst. Design, Shenzhen Univ., Shenzhen, China
fYear :
2013
fDate :
3-5 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Avoiding use of traditional high-speed analog-to digital converters (ADCs) and constant fraction discriminators, multi-voltage threshold (MVT) method is able to digitally sample positron emission tomography (PET) scintillation pulse with reasonable cost. As the key component of the MVT method, a time-to-digital convertor (TDC) with high resolution and large dynamic range is presented in this work. The TDC architecture uses a delay locked loop (DLL) to generate the fast clock edges from a 100 MHz clock, and a 32-stage Vernier delay lines (VDL) is used to achieve the 40pS timing resolution. The proposed TDC is designed using the standard 0.25 μm CMOS technology with 2.5V normal supply voltage. The power consumption of the TDC is ~70 mW.
Keywords :
CMOS integrated circuits; delay lock loops; positron emission tomography; time-digital conversion; CMOS time-to-digital converter; Vernier delay lines; delay locked loop; fast clock edges; frequency 100 MHz; multivoltage threshold method; positron emission tomography; power consumption; size 0.25 mum; standard CMOS technology; time 40 ps; voltage 2.5 V; CMOS integrated circuits; CMOS technology; Cities and towns; Delays; Image edge detection; Pulse measurements; MVT; PET; TDC; scintillation pulse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
Type :
conf
DOI :
10.1109/EDSSC.2013.6628151
Filename :
6628151
Link To Document :
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