Title :
GCT (gate commutated turn-off) thyristor and gate drive circuit
Author :
Yamamoto, Masanori ; Satoh, Katsumi ; Nakagawa, T. ; Kawakami, Akira
Author_Institution :
Mitsubishi Electr. Corp., Japan
Abstract :
The GCT (gate commutated turn-off) thyristor has superior characteristics; especially, snubberless turn-off capability and higher turn-on capability. These characteristics are influenced by the performance of the gate drive circuit. This paper presents simulation results and experimental results about turn-on and turn-off characteristics of GCT thyristor with gate drive circuit
Keywords :
commutation; driver circuits; thyristor applications; gate commutated turn-off thyristor; gate drive circuit; higher turn-on capability; simulation; snubberless turn-off capability; Anodes; Capacitance; Circuit simulation; Current density; Inductance; MOSFETs; Packaging; Snubbers; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703411
