Title :
Many-body optical gain in ZnO- and GaN-based quantum well lasers
Author :
Park, Seoung-Hwan ; Doyeol Ahn
Author_Institution :
Dept. of Electron. Eng., Catholic Univ. of Daegu, Kyeongbuk
Abstract :
In this paper, we review on electronic and the optical properties of ZnO-based QW lasers by using multi-band effective-mass theory and the non-Markovian gain model with many-body effects. We compare the results with those of GaN-based QW structures. In addition, we consider the crystal orientation effect on characteristics of ZnO- and GaN-based QW lasers. The self-consistent (SC) band structures and wave functions for the QW structures are obtained by solving the Schrodinger equation for electrons and the 3times3 Hamiltonian for holes
Keywords :
II-VI semiconductors; III-V semiconductors; Schrodinger equation; band structure; effective mass; quantum well lasers; wide band gap semiconductors; GaN; GaN-based QW structure; GaN-based quantum well laser; Schrodinger equation; ZnO; ZnO-based quantum well laser; crystal orientation; electronic properties; many-body optical gain; multiband effective-mass theory; nonMarkovian gain model; optical properties; self-consistent band structure; Charge carrier processes; Gallium nitride; Laser modes; Laser theory; Photonic band gap; Piezoelectric polarization; Potential energy; Quantum well lasers; Wave functions; Zinc oxide;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306729
