Title :
Carrier Recombination in Semiconductor Lasers: Beyond the ABC
Author :
Hader, J. ; Moloney, J.V. ; Koch, S.W. ; Fan, L. ; Fallahi, M.
Abstract :
Fully microscopic models are used to calculate the carrier losses due to spontaneous emission and Auger recombination in semiconductor lasers. It is shown that the theory gives excellent agreement with the experiment using only basic experimental input and standard material parameters. The density dependence as assumed in semi-empirical approaches for spontaneous emission, JSE=BN2 and Auger, JAuger=+CN3 is shown to lead to errors of a factor of three or more even if the correct constants B and C are known for low densities
Keywords :
Auger effect; electron-hole recombination; semiconductor lasers; spontaneous emission; Auger recombination; carrier loss; carrier recombination; microscopic model; semiconductor laser; spontaneous emission; Composite materials; Dielectric materials; Equations; Laser modes; Laser theory; Microscopy; Optical materials; Radiative recombination; Semiconductor lasers; Spontaneous emission;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306730
