• DocumentCode
    3477088
  • Title

    A multi-channel video multiplexer with high isolation switch

  • Author

    Huang Xiaozong ; Liu Luncai ; Huang Wengang ; Huang Zhihua

  • Author_Institution
    Analog IC Design Center, Sichuan Inst. of Solid-state Circuits, Chongqing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A video multiplexer with high isolation switch and capability of driving load as low as 75 Ω is presented in this paper. The switch consists of a pair of NMOS and PMOS with the noise-shunt path to improve the isolation performance, presenting low on-resistance. The amplifier operates in closed-loop condition for signal buffering or amplification typically, whose circuit design and layout floorplan are considered carefully, leading to low input offset voltage and wide output swing voltage. The channel off isolation between 8-channel of 75 dB, typical input offset voltage of less than 1 mV and output swing voltage of ±3.6 V with load of 150 Ω are achieved under the power supply of ±5 V. This multiplexer is fabricated with a commercial CMOS process with the featured size of 0.6 μm with the active area of 0.8 mm × 0.8 mm including ESD protection structures and power rings.
  • Keywords
    CMOS integrated circuits; MOS integrated circuits; amplifiers; multiplexing equipment; video signal processing; CMOS process; ESD protection structures; NMOS; PMOS; amplification; amplifier; circuit design; closed-loop condition; driving load capability; high isolation switch; input offset voltage; isolation performance; layout floorplan; multichannel video multiplexer; noise-shunt path; output swing voltage; power rings; power supply; resistance 150 ohm; resistance 75 ohm; signal buffering; voltage -3.6 V to 3.6 V; voltage -5 V to 5 V; wide output swing voltage; MOS devices; Multiplexing; Noise; RNA; complemtary switch; layout consideratons; video multiplexer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628162
  • Filename
    6628162