Title :
Full-quantum simulation of p-type junctionless transistors with multi-band k · p model
Author :
Huang, Joshua Zhexue ; Weng Cho Chew ; Li Jun Jiang ; Jie Peng ; Chi-Yung Yam ; Guan-Hua Chen
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green´s function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices.
Keywords :
Green´s function methods; nanoelectronics; nanowires; semiconductor device models; transistors; IM devices; JL transistors; NEGF approach; full-quantum simulation; inversion mode devices; model order reduction technique; multiband k·p model; nanowire transistor simulation; non-equilibrium Green´s function approach; p-type junctionless transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628164
