Adhesive wafer bonding of GaAs/Glass with Benzocyclobutene and dry film for GaAs CCD

Author

Shuangfu Wang ; Mei Han ; Jiaotuo Ye ; Le Luo

Author_Institution

State Key Lab. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol. (SIMIT), Shanghai, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

163

Lastpage

168

Abstract

This paper studies adhesive wafer bonding of 4 inches GaAs CCD device wafer with Optik glass for wafer level packaging. In this work, Benzocyclobutene (BCB) and dry film (DF) were proposed as the bonding material. Efforts were devoted to the warpage control. The relationship between the extent of warpage and bonding parameters, such as the bonding profile, the thickness of bonding material, supporting wafer, were studied. The total bonding area and bonding strength were also studied. Under the optimized bonding conditions, warpage of 90.40 um was obtained for BCB bonding. The optimized condition was demonstrated. Nearly 100% bonding area was obtained for BCB bonding. For DF bonding, the warpage was 123.47. The bonding strength was 15.89 MPa for DF bonding.

Keywords

III-V semiconductors; adhesive bonding; charge-coupled devices; gallium arsenide; glass; wafer bonding; wafer level packaging; BCB bonding; GaAs; GaAs CCD device wafer; GaAs/glass wafer bonding; adhesive wafer bonding; benzocyclobutene; bonding material; bonding profile; bonding strength; dry film; optik glass; pressure 15.89 MPa; size 90.40 mum; total bonding area; wafer level packaging; warpage control; Bonding; Gallium arsenide; Glass; Silicon; Stress; Substrates; Wafer bonding; BCB; GaAs/glass wafer bonding; bonding strength; dry film; warpage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756447

Filename

6756447