Title :
Free-Excitonic Gain in ZnO/MgxZn1-xO Strained Quantum Wells
Author :
Abiyasa, A.P. ; Yu, S.F. ; Fan, W.J. ; Lau, S.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.
Abstract :
Free-exciton with exciton phonon interaction of wurtzite ZnO/Mg xZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO/MgxZn1-xO QWs with the consideration of biaxial strain is calculated based on a 6times6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation constant of ZnO/MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively.
Keywords :
III-V semiconductors; conduction bands; excitons; magnesium compounds; phonons; semiconductor quantum wells; valence bands; wide band gap semiconductors; zinc compounds; 6times6 Hamiltonian calculation; ZnO-MgxZn1-xO; band offset ratio; biaxial strain; conduction band deformation constant; exciton phonon interaction; free-excitonic gain; semiconductor strained quantum wells; valence band structure; wurtzite quantum wells; Capacitive sensors; Charge carrier processes; Conducting materials; Electron optics; Excitons; Numerical models; Phonons; Power engineering and energy; Quantum mechanics; Zinc oxide;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306738
