Title :
Sensitivity enhancement of ion sensors by charge trapping on Extended Gate Field Effect Transistors
Author :
Ho, K.I. ; Chen, C.H. ; Lu, C.F. ; Chao-Sung Lai ; Chun Chang ; An-thung Cho ; Chang, J.-J. ; Chiang, M.F.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Electrolyte-insulator-semiconductor (EIS) and Extended-gate Field Effect Transistor (EGFET) devices with programmable HfO2/Si3N4/SiO2 structures are demonstrated for pH detection. The proposed programmable EIS and EGFET sensors with pH sensing membranes exhibit a high pH sensitivity (larger than the ideal Nernstain response, 59.16 mV/pH at 25°C) owing to the hydrogen ions attraction by electrons trapped within the embedded trapping layer(Si3N4) after programming. When compared with the conventional devices, the programmable sensors with programming provide the possibility for the small pH fluctuation detection and can be used in future pH sensor applications owing to its high pH sensing response.
Keywords :
chemical sensors; electrolytes; hafnium compounds; hydrogen ions; ion sensitive field effect transistors; silicon compounds; EGFET sensor; H; HfO2-Si3N4SiO2; charge trapping; electrolyte-insulator-semiconductor; electron trapping; embedded trapping layer; extended gate field effect transistor; hydrogen ions attraction; ion sensor sensitivity enhancement; pH fluctuation detection; pH sensing membrane; pH sensor; programmable EIS sensor; programmable structure; Capacitance; Charge carrier processes; Logic gates; Sensitivity; Sensors; ion sensitivity field effect transistor(ISFET); memory; super-nernstain;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628174
