Small low-frequency noise IGZO TFTs using a bilayer HfO2/SiO2 dielectric and the applications of IGZO TFTs to biosensors

Author

Liang-Yu Su ; Hsin-Ying Lin ; Huang-Kai Lin ; Jian-Jang Huang

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

The device exhibits a SS (subthreshold swing) of 95mV/decade, an on to off ratio over 10⁹, a hysteresis free transfer curve, and a high saturation current of 400 μA when biased at V_GS=2.5V and V_DS=3V. Under these high performance, the device exhibits small low frequency noise. The corresponding Hooge´s parameter can further reduce to 3.26×10^-4. Series measurements including contact resistance, constant current stress, high low frequency CV were employed to reveal the origin of the small LFN.

Keywords

II-VI semiconductors; biosensors; gallium compounds; hafnium compounds; high-k dielectric thin films; indium compounds; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; HfO₂-SiO₂; Hooge parameter; InGaZnO; SS; bilayer dielectric; biosensors; constant current stress; contact resistance; current 400 muA; high low frequency CV; hysteresis free transfer curve; series measurements; small low frequency noise; small low-frequency noise IGZO TFT; subthreshold swing; voltage 2.5 V; voltage 3 V; Atomic layer deposition; Atomic measurements; Insulators; Logic gates; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628177

Filename

6628177