DocumentCode
3477497
Title
SiC device technology for energy efficiency and high temperature operation
Author
Ostling, Mikael
Author_Institution
Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.
Keywords
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; energy efficiency; high-temperature operation; silicon carbide device technology; silicon carbide discrete devices; Rectifiers; Reliability; Silicon Carbide; Switch; devices; high voltage; low loss; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628179
Filename
6628179
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