Title :
Wideband Steady-State Numerical Model of a Tensile-Strained Bulk SOA
Author :
Connelly, Michael J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ.
Abstract :
A wideband steady-state numerical model of a tensile-strained bulk InP-InGaAsP semiconductor optical amplifier is presented. The model is applicable over a wide range of operating regimes. The model uses experimental measurements of the spontaneous emission spectra to extract pertinent model parameters such as the absorption loss, Auger recombination coefficients and effective intraband lifetime
Keywords :
Auger effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; tensile strength; Auger recombination coefficients; InP-InGaAsP; absorption loss; intraband lifetime; semiconductor optical amplifier; spontaneous emission spectra; tensile-strained bulk SOA; wideband steady-state numerical model; Charge carrier density; Equations; Numerical models; Optical waveguides; Polarization; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Tensile strain; Wideband;
Conference_Titel :
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location :
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN :
0-7803-9755-X
DOI :
10.1109/NUSOD.2006.306753
