Title :
Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited)
Author :
Ru Huang ; Qianqian Huang ; Zhan Zhan ; Chunlei Wu ; Yingxin Qiu ; Yangyuan Wang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits (Minist. of Educ., Peking Univ., Beijing, China
Abstract :
In this paper, two novel silicon-based TFETs are discussed, including Si junction-modulated TFET (JTFET) with the equivalent function to achieve ideally abrupt doping profile and multi-finger-gate TFET of dopant-segregated Schottky Barrier source (mFSB-TFET) with adaptive operation mechanism for better performance tradeoff.
Keywords :
elemental semiconductors; junction gate field effect transistors; low-power electronics; silicon; tunnel transistors; JTFET; Si; adaptive operation mechanism; dopant-segregated Schottky barrier source; doping profile; gate configuration; junction engineering; junction-modulated TFET; low power applications; mFSB-TFET; multi-finger-gate; performance tradeoff; tunneling FET; Annealing; Implants; Logic gates; Switches;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628182
