DocumentCode
3477645
Title
Ku-band MMIC power amplifier with on-chip compensation gate bias circuit
Author
Noh, Y.S. ; Yom, I.B.
Author_Institution
Electron. & Telecommun. Res. Inst., Daejeon
fYear
2008
fDate
16-20 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
Recently, Ku-band PHEMT MMIC power amplifiers have been demonstrated for LMDS, point-to-point wireless communications systems and VSAT applications with high gain , low cost and single-supply characteristics. These MMICs operate without any compensation mechanism such and process and temperature variations. However, PHEMT MMICs are sensitive to the threshold voltage and temperature variations. The threshold voltage of the transistor determines the yield of a MMIC amplifier. And HEMT amplifiers are seriously affected by temperature variation. In this work, we propose compensation gate bias circuit for threshold voltage and temperature variations, and its application to the Ku- band MMIC power amplifier.
Keywords
HEMT integrated circuits; MMIC power amplifiers; Ku-band; PHEMT MMIC power amplifiers; onchip compensation gate bias circuit; Circuits; Costs; HEMTs; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Temperature sensors; Threshold voltage; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location
Macau
Print_ISBN
978-1-4244-2641-6
Electronic_ISBN
978-1-4244-2642-3
Type
conf
DOI
10.1109/APMC.2008.4957887
Filename
4957887
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