Title :
Physics-based models of power semiconductor devices for the circuit simulator SPICE
Author :
Kraus, R. ; Türkes, P. ; Sigg, J.
Author_Institution :
Univ. of Bundeswehr Munich, Neubiberg, Germany
Abstract :
Models of power semiconductor devices are implemented in the circuit simulator PSpice. The combination of subcircuits and mathematical functions enables very compact solutions. High accuracy and validity in a wide operation range are obtained due to the derivation from device physics. Models of the power diode and the IGBT are presented as examples
Keywords :
SPICE; digital simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; IGBT; SPICE circuit simulator; mathematical functions; nonpunchthrough IGBT; physics-based models; power diode; power semiconductor devices; subcircuits; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Mathematical model; Physics; Power electronics; Power semiconductor devices; SPICE; Semiconductor diodes;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703414
