Integrated High Speed VCSELs for Bi-Directional Optical Interconnects

Author

Lysak, V.V. ; Chang, Ki Soo ; Lee, Yong Tak

Author_Institution

Dept. of Info. & Commun., Gwangju Inst. of Sci. & Technol.

fYear

2006

fDate

Sept. 2006

Firstpage

97

Lastpage

98

Abstract

In this work, the simulation of the 980 nm InGaAs intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) is presented. We analyze the thermal, electrical and optical properties of such devices with the different thicknesses of contact layers. Results of simulations show the larger optical power for devices with thicker contact layers. The device with contact layers of 5lambda/4n thickness has the maximal modulation bandwidth

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser beams; laser cavity resonators; optical interconnections; semiconductor lasers; surface emitting lasers; 980 nm; InGaAs; InGaAs VCSEL; bi-directional optical interconnects; contact layer thickness; electrical properties; high speed VCSEL; intra-cavity-contacted oxide-confined laser; modulation bandwidth; optical properties; thermal properties; vertical-cavity surface-emitting lasers; Bandwidth; Bidirectional control; Contacts; High speed optical techniques; Indium gallium arsenide; Optical devices; Optical interconnections; Optical modulation; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on

Conference_Location

Nanyang Technological University, Nanyang Executive Centre, Singapore, China

Print_ISBN

0-7803-9755-X

Type

conf

DOI

10.1109/NUSOD.2006.306759

Filename

4098799