DocumentCode :
3477719
Title :
Fabrication and microstructure evolution of preferred oriented nanotwinned copper by pulse electroplating for RDL in WLP
Author :
Heng Lee ; Wenguo Ning ; Chunsheng Zhu ; Gaowei Xu ; Le Luo ; Shenwu Tian
Author_Institution :
State Key Lab. Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
292
Lastpage :
295
Abstract :
Nanotwinned copper is drawing widely attention for it simultaneously demonstrates high strength, high ductility, and high conductivity. It will be very beneficial to microelectronics in many respects, one of which is redistribution layer in wafer level packaging. We take advantage of (111) preferred oriented nanotwinned copper to fabricate 2-poly-1-metal (2P1M) redistribution layer in wafer level packaging. Nanotwinned copper was deposited by pulsed electroplating. Texture of copper can be controlled by seedlayer, thickness of films, or patterns, and texture can be observed by X-ray diffraction. Microstructure and the evolution of copper after annealing were studied by focused ion beam, scanning electron microscopy, and transmission electron microscopy.
Keywords :
X-ray diffraction; annealing; copper; ductility; electroplating; focused ion beam technology; scanning electron microscopy; transmission electron microscopy; wafer level packaging; 2-poly-1-metal redistribution layer; Cu; RDL; WLP; X-ray diffraction; annealing; ductility; film thickness; focused ion beam; microstructure evolution; oriented nanotwinned copper; pulse electroplating; scanning electron microscopy; seed layer; transmission electron microscopy; wafer level packaging; Annealing; Copper; Crystals; Films; Microstructure; Nanoscale devices; Stress; nanotwinned copper; redistribution layer; wafer level packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756474
Filename :
6756474
Link To Document :
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