Title :
Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications
Author :
Shi, R.P. ; Huang, X.D. ; Leung, C.H. ; Lai, P.T.
Author_Institution :
Dept. of Electr. &Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
The charge-trapping properties of niobium-doped La2O3 have been investigated based on MONOS capacitors. The memory device with niobium-doped La2O3 CTL shows better characteristics than that with pure La2O3 CTL in memory window and P/E properties. It also shows good retention characteristics. Therefore, the niobium-doped La2O3 is a promising candidate as CTL for nonvolatile memory applications.
Keywords :
MOS capacitors; doping; flash memories; lanthanum compounds; niobium; La2O3:Nb; MONOS capacitors; charge-trapping characteristics; high dielectric constant; metal-oxide-nitride-oxide-silicon-type flash memories; niobium doping; nonvolatile memory applications; trap density; Annealing; MONOS devices; Materials;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628190
