Title :
Evaluation of Si pre-amorphization for obtaining ultra-shallow junctions
Author :
Sultan, Akif ; Banerjee, Sanjay ; List, Scott ; Pollack, Gordon ; Hosack, Harold
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
Abstract :
Two pre-amorphization techniques, shallow and deep amorphization using Si implants have been evaluated for obtaining shallow p-type junctions using B or BF2 implants followed by a Rapid Thermal Anneal (RTA) step. The effect on diffusion behavior and evolution of end-of-range dislocation loops has been studied experimentally using secondary ion mass spectrometry and planar and cross-sectional transmission electron microscopy. The shallow preamorphization followed by the dopant implant does not help in reduction of junction depth for either B or BF2 implants. Deep amorphization does help reduce junction depth. The pMOSFET leakage for deep amorphization scheme under a drain bias of 2.5 V is low (~pA/μm). However, the reverse diode leakage for different diode structures for deep preamorphization is high (~nA) for a reverse bias of 3.6 V
Keywords :
MOSFET; amorphisation; diffusion; dislocation loops; doping profiles; elemental semiconductors; ion implantation; leakage currents; p-n junctions; rapid thermal annealing; secondary ion mass spectra; semiconductor diodes; silicon; transmission electron microscopy; 1000 C; 1050 C; 2.5 V; 3.6 V; B implants; BF2 implants; CMOS flow; RTA step; Si pre-amorphization; Si:B; Si:BF2; chemical profile analysis; cross-sectional transmission electron microscopy; deep amorphization; diffusion behavior; diode structures; drain bias; end-of-range dislocation loops; junction depth reduction; pMOSFET leakage; planar TEM; reverse bias; reverse diode leakage; secondary ion mass spectrometry; shallow amorphization; shallow p-type junctions; transient enhanced diffusion; ultra-shallow junctions; Amorphous materials; Annealing; Chemical analysis; Implants; Instruments; MOSFET circuits; Mass spectroscopy; Rapid thermal processing; Semiconductor diodes; Transmission electron microscopy;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586104