Title :
GeO2/PZT resistive random access memory devices with Ni electrode
Author :
Kun-I Chou ; Chun-Hu Cheng ; Chin, Alvin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report a resistive random-access memory (RRAM) using stacked GeO2 and PZT. Under unipolar mode operation, the Ni/GeO2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.
Keywords :
lead compounds; nickel; oxygen compounds; random-access storage; tantalum compounds; titanium compounds; zirconium compounds; DC cycling; Ni-GeO2-PZT-TaN; RRAM; resistance window; resistive random access memory devices; temperature 85 degC; unipolar mode operation; Dielectrics; Educational institutions; Electrodes; Nickel; Resistance; Silicon; Switches; GeO2; PZT; RRAM; TiO2;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628194
