600 V, 25 A dielectrically-isolated power IC with vertical IGBT

Author

Mizoguchi, T. ; Shirasawa, T. ; Mori, M. ; Sugawara, Y.

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

40

Lastpage

44

Abstract

To obtain IGBT (insulated gate bipolar transistor) integrated large current power ICs which are more compact and reliable, a DI (dielectric isolation) application technology using a VIGBT (vertical IGBT) has been studied. As a result, an IC of the 600 V, 25 A class, presently the largest power rating of power ICs, has been achieved. The IGBT properties can be made identical to those of the discrete IGBT despite inherent restrictions of IC output devices. The IC also includes the control circuits. This DI method is known as a VLCS (vertical lateral composite structure) and is capable of integrating a large current vertical device. This method eliminates the latch-up problem of IGBTs using the junction isolation method

Keywords

insulated gate bipolar transistors; monolithic integrated circuits; power integrated circuits; 25 A; 600 V; dielectric isolation; patchup elimination; power IC; vertical IGBT; vertical lateral composite structure; Dielectrics and electrical insulation; Ice thickness; Ignition; Insulated gate bipolar transistors; Isolation technology; Laboratories; Motor drives; Power integrated circuits; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146062

Filename

146062