L-band power amplifier exhibits highest ruggedness rating

Author

Battaglia, B. ; Rice, D. ; Le, P. ; Davies, R. ; Lutz, D. ; Gogoi, B. ; Elliott, A.

Author_Institution

HVVi Semicond. Inc, Phoenix, AZ

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A new silicon transistor has been developed that enables the design of high power amplifiers through its unique high voltage capability and the novel device structure. The HVVFETtrade (high voltage vertical field effect transistor) technology has been optimized for pulsed applications above 1 GHz. The unique device structure enables high power amplifier designs that exhibit extreme ruggedness. The power amplifiers produced with the HVVFET technology are characterized at rated output power, full supply voltage and output VSWR of 20:1 over all phase angles in production.

Keywords

microwave field effect transistors; microwave power amplifiers; HVVFET technology; L-band power amplifier; full supply voltage; high power amplifiers; high voltage capability; high voltage vertical field effect transistor technology; output VSWR; phase angles; rated output power; ruggedness rating; silicon transistor; FETs; High power amplifiers; L-band; Optimized production technology; Power amplifiers; Power generation; Power supplies; Pulse amplifiers; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4957900

Filename

4957900