DocumentCode
3477948
Title
A 40–80-GHz mHEMT single-pole-double-throw switch using traveling-wave concept
Author
Tsai, Yi-Chien ; Kuo, Jing-Lin ; Wang, Huei
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
16-20 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
This paper presents a 40-80-GHz SPDT switch fabricated in mHEMT process. The SPDT switch accomplished insertion loss lower than 2.4 dB and isolation better than 23 dB. Via holes were shared to compact the layout and the chip size of 1 x 1 mm2 is obtained. Table 1 summarizes recently reported performance of SPDT switches in GaAs HEMT process.
Keywords
III-V semiconductors; field effect transistor switches; gallium arsenide; millimetre wave devices; GaAs; SPDT switch; frequency 40 GHz to 80 GHz; mHEMT single-pole-double-throw switch; traveling-wave concept; CMOS process; Gallium arsenide; HEMTs; Impedance; Insertion loss; Radio frequency; Semiconductor device measurement; Switches; Switching circuits; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location
Macau
Print_ISBN
978-1-4244-2641-6
Electronic_ISBN
978-1-4244-2642-3
Type
conf
DOI
10.1109/APMC.2008.4957902
Filename
4957902
Link To Document