DocumentCode
3477965
Title
Electrically induced Bragg Modulator for ultrafast light modulation in Indium Phosphide devices
Author
De Laurentis ; De Paola, F.M. ; d´Alessandro, V. ; Irace, A. ; Breglio, G.
Author_Institution
Dept. of Electron. & Telecommun. Eng., Naples Univ. "Federico II"
fYear
2006
fDate
Sept. 2006
Firstpage
121
Lastpage
122
Abstract
An electrically induced Bragg reflector modulator 2.5 mm long is been designed in InP/InGaAsP rib waveguide, which can theoretically reach ultra 40 GHz switching speed
Keywords
Bragg gratings; III-V semiconductors; electro-optical modulation; electro-optical switches; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; optical waveguides; rib waveguides; 2.5 mm; InP-InGaAsP; electrically induced Bragg grating reflector modulator; indium phosphide devices; optical switching; rib waveguide; ultrafast light modulation; Anodes; Computational modeling; Indium phosphide; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Plasma waves; Reflectivity; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Semiconductor Optoelectronic Devices, 2006. NUSOD '06. International Conference on
Conference_Location
Nanyang Technological University, Nanyang Executive Centre, Singapore, China
Print_ISBN
0-7803-9755-X
Type
conf
DOI
10.1109/NUSOD.2006.306771
Filename
4098811
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