• DocumentCode
    3477988
  • Title

    Ion implantation damage in quarter micron CMOS technology

  • Author

    Bala, K. ; Hoepfner, J. ; Tanimoto, H. ; Takedai, S. ; Sugiura, S. ; El-Kareh, B.

  • Author_Institution
    IBM Electronics, Hopewell Junction, NY, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Ion implantation can cause damage by accumulating charge on insulators and floating conductors. This paper describes test structures to study implant damage and summarizes experimental results obtained on charging photoresist and polysilicon structures of varying antenna ratios at different flood-gun conditions
  • Keywords
    MOSFET; ion implantation; 0.25 micron; Si; antenna ratio; charge accumulation; floating conductor; flood gun; insulator; ion implantation damage; photoresist; polysilicon; quarter micron CMOS technology; test structure; Breakdown voltage; CMOS technology; Conductors; Implants; Ion implantation; MOS capacitors; MOSFET circuits; Monitoring; Resists; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586116
  • Filename
    586116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3477988