Title :
Ion implantation damage in quarter micron CMOS technology
Author :
Bala, K. ; Hoepfner, J. ; Tanimoto, H. ; Takedai, S. ; Sugiura, S. ; El-Kareh, B.
Author_Institution :
IBM Electronics, Hopewell Junction, NY, USA
Abstract :
Ion implantation can cause damage by accumulating charge on insulators and floating conductors. This paper describes test structures to study implant damage and summarizes experimental results obtained on charging photoresist and polysilicon structures of varying antenna ratios at different flood-gun conditions
Keywords :
MOSFET; ion implantation; 0.25 micron; Si; antenna ratio; charge accumulation; floating conductor; flood gun; insulator; ion implantation damage; photoresist; polysilicon; quarter micron CMOS technology; test structure; Breakdown voltage; CMOS technology; Conductors; Implants; Ion implantation; MOS capacitors; MOSFET circuits; Monitoring; Resists; Space technology;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586116
